Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target

ABSTRACT

Provided are an oxide sintered compact whereby low carrier density and high carrier mobility are obtained when the oxide sintered compact is used to obtain an oxide semiconductor thin film by a sputtering method, and a sputtering target which uses the oxide sintered compact. This oxide sintered compact contains, as an oxide, one or more positive divalent elements selected from the group consisting of indium, gallium, nickel, cobalt, calcium, strontium, and lead. The gallium content is less than 0.08 to 0.20 in terms of Ga/(In+Ga) atomic ratio, and the positive dyad (M) content is 0.0001 to 0.05 in terms of M/(In+Ga+M) atomic ratio. In a crystalline oxide semiconductor thin film formed using the oxide sintered compact as a sputtering target, the carrier density is less than 1×10 18  cm −3 , and the carrier mobility is at least 10 cm 2 V −1 sec −1 .

TECHNICAL FIELD

The present invention relates to an oxide sintered body, a target, and an oxide semiconductor thin film obtained by using the target, and more particularly to a crystalline oxide semiconductor thin film which has low carrier density and high carrier mobility and contains indium, gallium, and a positive divalent element (one or more positive divalent elements selected from the group consisting of nickel, cobalt, calcium, strontium, and lead), a sputtering target that is suitable for the formation of the crystalline oxide semiconductor thin film and contains Indium, gallium, and a positive divalent element (one or more positive divalent elements selected from the group consisting of nickel, cobalt, calcium, strontium, and lead), and an oxide sintered body that is suitable for obtaining the sputtering target and contains indium, gallium, and a positive divalent element (one or more positive divalent elements selected from the group consisting of nickel, cobalt, calcium, strontium, and lead).

BACKGROUND ART

Thin film transistors (TFTs) are a type of field effect transistors (hereinafter referred to as FETs). TFTs are three-terminal elements having a gate terminal, a source terminal, and a drain terminal in the basic structure. TFTs are active elements having a function of switching the current between the source terminal and the drain terminal so that a semiconductor thin film deposited on a substrate is used as a channel layer in which electrons or holes move and a voltage is applied to the gate terminal to control the current flowing in the channel layer. TFTs are electronic devices that are most widely used these days in practical application. Typical applications of TFTs include liquid-crystal driving elements.

Currently, most widely used TFTs are metal-insulator-semiconductor-FETs (MIS-FETs) in which a polycrystalline silicon film or an amorphous silicon film is used as a channel layer material. MIS-FETs including silicon are opaque to visible light and thus fail to form transparent circuits. Therefore, when MIS-FETs are used as switching elements for driving liquid crystals in liquid crystal displays, the aperture ratio of a display pixel in the devices is small.

Due to the recent need for high-resolution liquid crystals, switching elements for driving liquid crystals now require high-speed driving. In order to achieve high-speed driving, a semiconductor thin film in which the mobility of electrons or holes, is higher than that in at least amorphous silicon needs to be used as a channel layer.

Under such circumstances, Patent Document 1 proposes a transparent semi-insulating amorphous oxide thin film which is a transparent amorphous oxide thin film deposited by vapor deposition and containing elements of In, Ga, Zn, and O. The composition of the oxide is InGaO₃(ZnO)_(m) (m is a natural number less than 6) when the oxide is crystallized. The transparent semi-insulating amorphous oxide thin film is a semi-insulating thin film having a carrier mobility (also referred to as carrier electron mobility) of more than 1 cm² V⁻¹ sec⁻¹ and a carrier density (also referred to as carrier electron density) of 10¹⁶ cm⁻³ or less without doping with an impurity ion. Patent Document 1 also proposes a thin film transistor in which the transparent semi-insulating amorphous oxide thin film is used as a channel layer.

However, as proposed in Patent Document 1, the transparent amorphous oxide thin film (a-IGZO film) containing elements of In, Ga, Zn, and O and deposited by any method of vapor deposition selected from sputtering and pulsed laser deposition has a relatively high electron carrier mobility in a range of from 1 to 10 cm² V⁻¹ sec⁻¹, but instability has been often pointed out as a problem in the case of forming a device such as a TFT as the fact that the amorphous oxide thin film is originally likely to generate oxygen loss and the behavior of the electron carrier is not always stable against external factors such as heat cause adverse effects.

Regarding materials for solving such a problem, Patent Document 2 proposes a thin film transistor including an oxide thin film in which gallium is dissolved in indium oxide. In the oxide thin film, the Ga/(Ga+In) atomic ratio is 0.001 to 0.12, and the percentage of indium and gallium with respect to the total metal atoms is 80 at % or more. The oxide thin film has an In₂O₃ bixbyite structure. An oxide sintered body is proposed as the material of the oxide thin film in which gallium is dissolved in indium oxide. In the oxide sintered body, the Ga/(Ga+In) atomic ratio is 0.001 to 0.12, and the percentage of indium and gallium with respect to the total metal atoms is 80 at % or more. The oxide sintered body has an In₂O₃ bixbyite structure.

However, the carrier density described in Examples 1 to 8 of Patent Document 2 is at the level of 10¹⁸ cm⁻³, and there is still a problem that the carrier density is too high for the oxide semiconductor thin film to be applied to a TFT.

Accordingly, Patent Document 3 proposes a semiconductor device using a polycrystalline oxide semiconductor thin film which contains In and two or more kinds of metal other than In and has an electron carrier density of less than 1×10¹⁸ cm⁻³. It is described that the two or more kinds of metal other than In are the positive divalent metal and the positive trivalent metal in claim 6 of Patent Document 3 and the positive divalent metal is at least one element selected from Zn, Mg, Cu, Ni, Co, Ca, and Sr and the positive trivalent metal is at least one element selected from Ga, Al, B, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu in claim 7 of Patent Document 3.

However, in Patent Document 3, Examples for the combination of Ga and at least one element selected from Ni, Co, Ca, and Sr are not described. In addition, the hole mobility is as low as less than 10 cm² V⁻¹ sec⁻¹ in Examples for combinations other than the combination of these. Furthermore, it is not instigated which sintered body structure is preferable for an oxide sintered body to be used in sputter deposition of an oxide semiconductor thin film so as to avoid the occurrence of arcing and nodules. In addition, the sputter deposition is performed by high frequency (RF) sputtering, and it is also not clear whether the sputtering target can be subjected to direct current (DC) sputtering or not.

-   Patent Document 1: Japanese Unexamined Patent Application,     Publication No. 2010-219538 -   Patent Document 2: PCT International Publication No. WO2010/032422 -   Patent Document 3: PCT International Publication No. WO2008/117739 -   Patent Document 4: PCT International Publication No. WO2003/014409 -   Patent Document 5: Japanese Unexamined Patent Application,     Publication No. 2012-253372

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention

An object of the present invention is to provide a sputtering target that allows a crystalline oxide semiconductor thin film to have low carrier density, an oxide sintered body most suitable for obtaining the sputtering target, and an oxide semiconductor thin film that is obtained by using the sputtering target and has low carrier density and high carrier mobility.

Means for Solving the Problems

The present inventors have newly found out that an oxide sintered body that has been sintered is composed substantially of an In₂O₃ phase having a bixbyite-type structure; and a GaInO₃ phase having a β-Ga₂O₃-type structure as a formed phase other than the In₂O₃ phase, or a GaInO₃ phase having a β-Ga₂O₃-type structure and a (Ga, In)₂O₃ phase as a formed phase other than the In₂O₃ phase. And an oxide semiconductor thin film produced using the oxide sintered body has a carrier mobility of 10 cm² V⁻¹ sec⁻¹ or more when a small amount of one or more positive divalent elements M selected from the group consisting of nickel, cobalt, calcium, strontium, and lead, specifically at a ratio of 0.0001 or more and 0.05 or less in terms of the ratio of M/(In+Ga+M) is contained particularly in an oxide sintered body containing gallium as an oxide at a ratio of 0.08 or more and less than 0.20 in terms of the ratio of gallium to indium, Ga/(In+Ga).

That is, in the first embodiment of the present invention, the oxide sintered body includes indium, gallium, and a positive divalent element as oxides. The gallium content is 0.08 or more and less than 0.20 in terms of Ga/(In+Ga) atomic ratio. The total content of all the positive divalent elements is 0.0001 or more and 0.05 or less in terms of M/(In+Ga+M) atomic ratio. The positive divalent element is one or more selected from the group consisting of nickel, cobalt, calcium, strontium, and lead. The oxide sintered body is composed of an In₂O₃ phase having a bixbyite-type structure; and a GaInO₃ phase having a β-Ga₂O₃-type structure as a formed phase other than the In₂O₃ phase, or a GaInO₃ phase having a β-Ga₂O₃-type structure and a (Ga, In)₂O₃ phase as a formed phase other than the In₂O₃ phase. The oxide sintered body is substantially free of a NiGa₂O₄ phase, a CoGa₂O₄ phase, a CaGa₄O₇ phase, a Ca₅Ga₆O₁₄ phase, a SrGa₁₂O₁₉ phase, a SrGa₂O₄ phase, a Sr₃Ga₂O₆ phase, and a Ga₂PbO₄ phase that are a complex oxide composed of the positive divalent element and gallium or a complex oxide phase of these.

In a second embodiment of the present invention, the total content of all the positive divalent elements is 0.0001 or more and 0.03 or less in terms of M/(In+Ga+M) atomic ratio in the oxide sintered body according to the first embodiment.

In a third embodiment of the present invention, the gallium content is 0.08 or more and 0.15 or less in terms of Ga/(In+Ga) atomic ratio in the oxide sintered body according to the first or second embodiment.

In a fourth embodiment of the present invention, the oxide sintered body according to any one of the first to third embodiments is substantially free of positive divalent elements other than the positive divalent elements and positive trivalent to positive hexavalent elements other than indium and gallium.

In a fifth embodiment of the present invention, the X-ray diffraction peak intensity ratio of the GaInO₃ phase having a β-Ga₂O₃-type structure defined by formula 1 below is in the range of from 2% or more to 75% or less in the oxide sintered body according to any one of the first to fourth embodiments.

100×I[GaInO₃ phase (111)]/{I[In₂O₃ phase (400)]+I[GaInO₃ phase (111)]}[%]  Formula 1

In a sixth embodiment of the present invention, a sputtering target is obtained by machining the oxide sintered body according to any one of the first to fifth embodiments.

In a seventh embodiment of the present invention, a crystalline oxide semiconductor thin film is obtained by forming an amorphous film on a substrate by sputtering using the sputtering target according to the sixth embodiment, followed by crystallization of the amorphous film by heating in an oxidizing atmosphere.

In an eighth embodiment of the present invention, the oxide semiconductor thin film according to the seventh embodiment has a carrier mobility of 10 cm² V⁻¹ sec⁻¹ or more.

In a ninth embodiment of the present invention, the oxide semiconductor thin film according to the seventh or eighth embodiment has a carrier density of less than 1.0×10¹⁸ cm⁻³.

Effects of the Invention

An oxide sintered body of the present invention that contains indium and gallium as oxides and further contains a positive divalent element M so that the M/(In+Ga+M) atomic ratio is 0.0001 or more and 0.05 or less can provide a crystalline oxide semiconductor thin film of the present invention by sputter deposition and subsequent heating, for example, when the oxide sintered body is used as a sputtering target. The crystalline oxide semiconductor thin film has a bixbyite structure. The presence of a predetermined amount of the positive divalent element M provides an effect of reducing carrier density. When the crystalline oxide semiconductor thin film of the present invention is used in TFTs, the on/off ratio of TFTs can be increased. In the present invention, it is possible to stably obtain an oxide semiconductor film having not only a decreased carrier density but also an excellent carrier mobility of 10 cm² V⁻¹ sec⁻¹ or more by sputter deposition as the oxide sintered body is composed substantially of an In₂O₃ phase having a bixbyite-type structure; and a GaInO₃ phase having a β-Ga₂O₃-type structure as a formed phase other than the In₂O₃ phase, or a GaInO₃ phase having a β-Ga₂O₃-type structure and a (Ga, In)₂O₃ phase as a formed phase other than the In₂O₃ phase. Therefore, the oxide sintered body, the target, and the oxide semiconductor thin film obtained by using the target in the present invention are industrially very useful.

PREFERRED MODE FOR CARRYING OUT THE INVENTION

An oxide sintered body, a sputtering target, and an oxide thin film obtained by using the target in the present invention will be described below in detail.

The oxide sintered body of the present invention contains Indium, gallium, and a positive divalent element M. In the oxide sintered body, the gallium content is 0.08 or more and less than 0.20 in terms of Ga/(In+Ga) atomic ratio, the concentration of the positive divalent element M is 0.0001 or more and 0.05 or less in terms of M/(In+Ga+M) atomic ratio, and the divalent element M is one or more elements selected from the group consisting of nickel, cobalt, calcium, strontium, and lead.

The gallium content, in terms of Ga/(In+Ga) atomic ratio, is 0.08 or more and less than 0.20 and more preferably 0.08 or more and 0.15 or less. Gallium has an effect of reducing the oxygen loss in the crystalline oxide semiconductor thin film of the present invention because gallium has high bonding strength to oxygen. When the gallium content is less than 0.08 in terms of Ga/(In+Ga) atomic ratio, this effect is not sufficiently obtained. When the gallium content is 0.20 or more, the crystallization temperature is too high. Thus, the crystallinity cannot be increased in the temperature range regarded as preferable for semiconductor processing, and the carrier mobility is not high enough as an oxide semiconductor thin film.

The oxide sintered body of the present invention contains the positive divalent element M in addition to indium and gallium in the composition ranges defined above. The concentration of the positive divalent element M, in terms of M/(In+Ga+M) atomic ratio, is 0.0001 or more and 0.05 or less and preferably 0.0001 or more and 0.03 or less.

Doping the oxide sintered body of the present invention with the positive divalent element M in this range reduces the carrier density because the positive divalent element M has an effect of neutralizing electrons generated mainly by oxygen defects. When the crystalline oxide semiconductor thin film of the present invention is used in TFTs, the on/off ratio of TFTs can be increased.

It is preferred that the oxide sintered body of the present invention is substantially free of elements M′, which are positive divalent elements other than the positive divalent element M and positive trivalent to positive hexavalent elements other than indium and gallium. The term “substantially free of” as used herein means that the content of each element M′, in terms of M′/(In+Ga+M′) atomic ratio, is 500 ppm or less, preferably 200 ppm or less, and more preferably 100 ppm or less. Specific examples of the element M′ include positive divalent elements, such as Cu, Mg, and Zn; positive trivalent elements, such as Al, Y, Sc, B, and lanthanoids; positive tetravalent elements, such as Sn, Ge, Ti, Si, Zr, Hf, C, and Ce; positive pentavalent elements, such as Nb and Ta; and positive hexavalent elements, such as W and Mo.

1. Structure of Oxide Sintered Body

It is preferred that the oxide sintered body of the present invention is composed of an In₂O₃ phase having a bixbyite-type structure; and a GaInO₃ phase having a β-Ga₂O₃-type structure as a formed phase other than the In₂O₃ phase, or a GaInO₃ phase having a β-Ga₂O₃-type structure and a (Ga, In)₂O₃ phase as a formed phase other than the In₂O₃ phase. When the oxide sintered body of the present invention is composed only of an In₂O₃ phase, nodules are generated, for example, as in Comparative Example 11 of Patent Document 4 (WO2003/014409 A) regardless of the presence of the positive divalent element M. On the other hand, a NiGa₂O₄ phase, a CoGa₂O₄ phase, a CaGa₄O₇ phase, a Ca₅Ga₆O₁₄ phase, a SrGa₁₂O₁₉ phase, a SrGa₂O₄ phase, a Sr₃Ga₂O₆ phase, and a Ga₂PbO₄ phase described above or a complex oxide phase of these have a higher electrical resistance value as compared to the In₂O₃ phase or the GaInO₃ phase so they remain after sputter deposition and easily generate nodules. In addition, the oxide semiconductor thin film formed through sputter deposition by using the oxide sintered body in which these phases are generated tends to have an In₂O₃ phase having lower crystallinity and lower carrier mobility.

Gallium and the positive divalent element M are dissolved in the In₂O₃ phase. In addition, gallium makes up the GaInO₃ phase or the (Ga, In)₂O₃ phase. In the case of being dissolved in the In₂O₃ phase, gallium and the positive divalent element M substitute for indium, which is a trivalent cation, at the lattice positions. It is not preferred that gallium is not dissolved in the In₂O₃ phase but forms a Ga₂O₃ phase having a β-Ga₂O₃-type structure because of unsuccessful sintering or the like. Since the Ga₂O₃ phase has low conductivity, abnormal discharge arises.

It is preferred that the oxide sintered body of the present invention includes only a GaInO₃ phase having a β-Ga₂O₃-type structure or a GaInO₃ phase having a β-Ga₂O₃-type structure and a (Ga, In)₂O₃ phase in a range in which the X-ray diffraction peak intensity ratio defined by formula 1 below is 2% or more and 75% or less other than the In₂O₃ phase having a bixbyite-type structure.

100×I[GaInO₃ phase (111)]/{I[In₂O₃ phase (400)]+I[GaInO₃ phase (111)]}[%]  Formula 1

(wherein I [In₂O₃ phase (400)] represents a (400) peak intensity of the In₂O₃ phase having a bixbyite-type structure, and I [GaInO₃ phase (111)] represents a (111) peak intensity of the complex oxide β-GaInO₃ phase having a β-Ga₂O₃-type structure.)

2. Method for Producing Oxide Sintered Body

The oxide sintered body of the present invention uses an oxide powder consisting of an indium oxide powder and a gallium oxide powder and the oxide powder of a positive divalent element M as raw material powders.

In the process for producing the oxide sintered body of the present invention, these raw material powders are mixed and then compacted, and the compact is sintered by ordinary-pressure sintering. The formed phases in the structure of the oxide sintered body of the present invention strongly depend on the conditions in each step for producing the oxide sintered body, for example, the particle size of the raw material powders, the mixing conditions, and the sintering conditions.

The structure of the oxide sintered body of the present invention is preferably composed of an In₂O₃ phase having a bixbyite-type structure; and a GaInO₃ phase having a β-Ga₂O₃-type structure as a formed phase other than the In₂O₃ phase, or a GaInO₃ phase having a β-Ga₂O₃-type structure and a (Ga, In)₂O₃ phase as a formed phase other than the In₂O₃ phase in a desired ratio. For this, the mean particle size of each raw material powder is preferably 3 μm or less and more preferably 1.5 μm or less. As described above, in addition to the In₂O₃ phase the oxide sintered body includes the GaInO₃ phase having a β-Ga₂O₃-type structure or both the GaInO₃ phase having a β-Ga₂O₃-type structure and the (Ga, In)₂O₃ phase. In order to suppress excessive formation of these phases, the mean particle size of the raw material powders is preferably 1.5 μm or less.

Indium oxide powder is a raw material for ITO (indium tin oxide), and fine indium oxide powder having good sintering properties has been developed along with improvements in ITO. Since indium oxide powder has been continuously used in large quantities as a raw material for ITO, raw material powder having a mean particle size of 0.8 μm or less is available these days.

However, since the amount of gallium oxide powder or the oxide powder of the positive divalent element M used is still smaller than that of indium oxide powder used, it is difficult to obtain raw material powder having a mean particle size of 1.5 μm or less. Therefore, when only coarse gallium oxide powder is available, the powder needs to be pulverized into particles having a mean particle size of 1.5 μm or less.

In the process for sintering the oxide sintered body of the present invention, ordinary-pressure sintering is preferably employed. Ordinary-pressure sintering is a simple and industrially advantageous method, and is also an economically preferable means.

When ordinary-pressure sintering is used, a compact is first produced as described above. Raw material powders are placed in a resin pot and mixed with a binder (for example, PVA) and the like by wet ball milling or the like. In the production of the oxide sintered body of the present invention, the ball mill mixing is preferably performed for 18 hours or longer in order to suppress excessive formation of the GaInO₃ phase having a β-Ga₂O₃-type structure or both the GaInO₃ phase having a β-Ga₂O₃-type structure and the (Ga, In)₂O₃ phase in addition to the In₂O₃ phase or not to form a Ga₂O₃ phase having a β-Ga₂O₃-type structure. At this time, hard ZrO₂ balls may be used as mixing balls. After mixing, the slurry is taken out, filtrated, dried, and granulated. Subsequently, the resultant granulated material is compacted under a pressure of about 9.8 MPa (0.1 ton/cm²) to 294 MPa (3 ton/cm²) by cold isostatic pressing to form a compact.

The sintering process by ordinary-pressure sintering is preferably preformed in an atmosphere containing oxygen. The volume fraction of oxygen in the atmosphere is preferably over 20%. In particular, when the volume fraction of oxygen is over 20%, the oxide sintered body is further densified. An excessive amount of oxygen in the atmosphere causes the surface of the compact to undergo sintering in advance during the early stage of sintering. Subsequently, sintering proceeds while the inside of the compact is reduced, and a highly dense oxide sintered body is finally obtained.

In an atmosphere free of oxygen, the surface of the compact does not undergo sintering and as a result, densification of the sintered body does not proceed. If oxygen is absent, indium oxide decomposes particularly at about 900° C. to 1000° C. to form metal indium, which makes it difficult to obtain a desired oxide sintered body.

The temperature range of ordinary-pressure sintering is preferably 1200° C. or higher and 1550° C. or lower and more preferably from 1350° C. or higher and 1450° C. or lower in an atmosphere obtained by introducing oxygen gas into air in a sintering furnace. The sintering time is preferably 10 to 30 hours, and more preferably 15 to 25 hours.

When the sintering temperature is in the above range, and the oxide powder consisting of an indium oxide powder and a gallium oxide powder and an oxide powder of the positive divalent element M which are controlled to have a mean particle size of 1.5 μm or less are used as raw material powders, an oxide sintered body that is composed of an In₂O₃ phase having a bixbyite-type structure; and a GaInO₃ phase having a β-Ga₂O₃-type structure as a formed phase other than the In₂O₃ phase, or a GaInO₃ phase having a β-Ga₂O₃-type structure and a (Ga, In)₂O₃ phase as a formed phase other than the In₂O₃ phase is obtained.

At a sintering temperature lower than 1200° C., the sintering reaction does not proceed well and the disadvantage is caused that the density of the oxide sintered body is less than 6.4 g/cm³. On the other hand, the formation of the (Ga, In)₂O₃ phase is significant at a sintering temperature higher than 1550° C. The (Ga, In)₂O₃ phase causes a decrease in deposition rate since it has a higher electrical resistance value than the GaInO₃ phase. At a sintering temperature of 1550° C. or lower, only a small amount of the (Ga, In)₂O₃ phase is produce, which is acceptable. From this point of view, the sintering temperature is preferably 1200° C. or higher and 1550° C. or lower and more preferably from 1350° C. or higher and 1450° C. or lower.

The temperature elevation rate until the sintering temperature is reached is preferably in the range of 0.2 to 5° C./min in order to cause debinding without forming cracks in the sintered body. As long as the temperature elevation rate is this range, the temperature may be increased to the sintering temperature in a combination of different temperature elevation rates as desired. During the temperature elevation process, a particular temperature may be maintained for a certain time in order for debinding and sintering to proceed. Particularly in the case of using a lead oxide powder as a raw material powder, it is effective to hold the oxide sintered body at a temperature of 1100° C. or lower for a certain time in order to promote the dissolution of the lead element into the In₂O₃ phase. The holding time is not particularly limited, but is preferably 1 hour or longer and 10 hours or shorter. After sintering, oxygen introduction is stopped before cooling. The temperature is preferably decreased to 1000° C. at a temperature drop rate in the range of preferably 0.2 to 5° C./min, and particularly 0.2° C./min or more and less than 1° C./min.

3. Target

The target of the present invention can be obtained by machining the oxide sintered body to a predetermined size, grinding the surface thereof and bonding the oxide sintered body to a backing plate. The target preferably has a flat shape, but may have a cylindrical shape. When a cylindrical target is used, it is preferred to suppress particle generation due to target rotation.

In order to be used as a sputtering target, the density of the oxide sintered body of the present invention is preferably 6.4 g/cm³ or more, and it is preferably 6.8 g/cm³ or more when the gallium content is 0.08 or more and less than 0.20 in terms of Ga/(In+Ga) atomic ratio. It is not preferred that the density is less than 6.4 g/cm³ since nodules are generated when being used in mass production.

4. Oxide Semiconductor Thin Film and Method for Depositing Oxide Semiconductor Thin Film

The crystalline oxide semiconductor thin film of the present invention is obtained as follows: once forming an amorphous thin film on a substrate by sputtering using the sputtering target; and subjecting the amorphous thin film to heat treatment.

The sputtering target is formed from the oxide sintered body. The structure of the oxide sintered body, namely, the structure composed basically of an In₂O₃ phase having a bixbyite-type structure and a GaInO₃ phase having a β-Ga₂O₃-type structure, is important. It is important that the crystallization temperature of the amorphous oxide thin film to be once formed is sufficiently high in order to obtain the crystalline oxide semiconductor thin film according to the present invention, but this is related to the structure of the oxide sintered body. That is, when the oxide sintered body includes not only an In₂O₃ phase having a bixbyite-type structure but also a GaInO₃ phase having a β-Ga₂O₃-type structure as in the oxide sintered body to be used in the present invention, the oxide thin film obtained from this oxide sintered body through film deposition has a high crystallization temperature, namely, a crystallization temperature of preferably 250° C. or higher, more preferably 300° C. or higher, and even more preferably 350° C. or higher. That is, the oxide thin film is a stable amorphous film. In contrast, when the oxide sintered body includes only an In₂O₃ phase having a bixbyite-type structure, after the film deposition the oxide thin film has a low crystallization temperature of about 190 to 230° C. and is not completely amorphous in some cases, for example, as disclosed in Patent Document 2 (WO2010/032422 A). This is because microcrystals are already generated after the film deposition in this case and it is difficult to perform patterning by wet etching due to the formation of residue.

Ordinary sputtering is used in the process for forming the amorphous thin film, but in particular, direct current (DC) sputtering is industrially advantageous because the thermal effects are minimized during film deposition and high-rate deposition is achieved. To form the oxide semiconductor thin film of the present invention by direct current sputtering, a gas mixture of an inert gas and oxygen, particularly argon and oxygen, is preferably used as a sputtering gas. Sputtering is preferably performed in a chamber of a sputtering apparatus at an internal pressure of 0.1 to 1 Pa, particularly 0.2 to 0.8 Pa.

The substrate is typically a glass substrate and is preferably an alkali-free glass substrate. In addition, any resin sheet and resin film that withstands the above process temperature can be used.

In the process for forming the amorphous thin film, presputtering can be performed as follows: for example, after evacuation to 1×10⁻⁴ Pa or less, introducing a gas mixture of argon and oxygen until the gas pressure reaches 0.2 to 0.5 Pa; and generating a direct current plasma by applying direct current power so that the direct current power with respect to the area of the target, namely, the direct current power density, is in the range of about 1 to 7 W/cm². It is preferred that, after this presputtering for 5 to 30 minutes, the substrate position be corrected as desired and then sputtering be performed. In sputter deposition, the direct current power applied is increased in the acceptable range in order to increase the deposition rate.

The crystalline oxide semiconductor thin film of the present invention is obtained by forming the amorphous thin film and crystalizing this through a heat treatment. The condition for a heat treatment is a temperature higher than the crystallization temperature in an oxidizing atmosphere. The oxidizing atmosphere is preferably an atmosphere containing oxygen, ozone, water vapor, or nitrogen oxides. The temperature for heat treatment is preferably 250 to 600° C., more preferably 300 to 550° C., and even more preferably 350 to 500° C. The time for heat treatment, i.e., the time during which the amorphous thin film is held at the heat treatment temperature, is preferably 1 to 120 minutes and more preferably 5 to 60 minutes. The crystallization method involves, for example, once forming an amorphous film at a low temperature, for example, near room temperature or at a substrate temperature of 100 to 300° C., and then crystalizing the oxide thin film through a heat treatment at the crystallization temperature or higher, or heating the substrate to the crystallization temperature of the oxide thin film or higher to form a crystalline oxide thin film. The heating temperature in these two methods is only about 600° C. or lower, and there is no significant difference in treatment temperature as compared with a known semiconductor process described in Patent Document 5 (JP 2012-253372 A), for example.

The proportion of indium, gallium, and the positive divalent element M in the amorphous thin film and the crystalline oxide semiconductor thin film substantially corresponds to the composition of the oxide sintered body of the present invention. That is, the crystalline oxide semiconductor thin film contains indium and gallium as oxides and further contains the positive divalent element M. The gallium content is 0.08 or more and less than 0.20 in terms of Ga/(In+Ga) atomic ratio. The content of the positive divalent element M is 0.0001 or more and 0.05 or less in terms of M/(In+Ga+M) atomic ratio. The gallium content is more preferably 0.08 or more and 0.15 or less in terms of Ga/(In+Ga) atomic ratio. In addition, the content of the positive divalent element M is more preferably 0.0001 or more and 0.03 or less in terms of M/(In+Ga+M) atomic ratio.

The crystalline oxide semiconductor thin film of the present invention preferably includes only an In₂O₃ phase having a bixbyite structure. In the In₂O₃ phase, gallium is dissolved to substitute for indium, which is a trivalent cation, at the lattice positions, and the positive divalent element M is dissolved to substitute, as in the oxide sintered body. In the oxide semiconductor thin film of the present invention, the carrier density decreases to less than 1.0×10¹⁸ cm⁻³ because doping of the positive divalent element M has an effect of neutralizing carrier electrons generated mainly by oxygen defects. The carrier density is more preferably 3.0×10¹⁷ cm⁻³ or less. On the other hand, the carrier mobility tends to decrease as the carrier density decreases, but the carrier mobility is preferably 10 cm² V⁻¹ sec⁻¹ or more, more preferably 15 cm² V⁻¹ sec⁻¹ or more, and particularly preferably 20 cm² V⁻¹ sec⁻¹ or more.

The crystalline oxide semiconductor thin film of the present invention is subjected to micromachining, which is required in applications such as TFTs by wet etching or dry etching. It is possible to perform micromachining by wet etching using a weak acid after the formation of an amorphous film when an amorphous film is once formed at a low temperature, and then the oxide thin film is crystallized by being subjected to a heat treatment at a temperature equal to or higher than the crystallization temperature. Most weak acids can be used, but a weak acid composed mainly of oxalic acid is preferably used. For example, commercial products, such as ITO-06N available from Kanto Chemical Co., Inc., can be used. For example, wet etching or dry etching using a strong acid such as an aqueous solution of ferric chloride can be applied when a crystalline oxide thin film is deposited by heating the substrate to a temperature equal to or higher than the crystallization temperature of the oxide thin film, but dry etching is preferred in consideration of a damage to a TFT in the vicinity.

Although the thickness of the crystalline oxide semiconductor thin film of the present invention is not limited, the thickness is 10 to 500 nm, preferably 20 to 300 nm, and more preferably 30 to 100 nm. When the thickness is less than 10 nm, unfavorable crystallinity is obtained, and as a result, high carrier mobility is not achieved. When the film thickness is more than 500 nm, it is disadvantageous in that a problem associated with productivity arises.

In addition, the crystalline oxide semiconductor thin film of the present invention has an average transmittance in the visible region (400 to 800 nm) of preferably 80% or more, more preferably 85% or more, and even more preferably 90% or more. When applying the crystalline oxide semiconductor thin film to a transparent TFT, the light extraction efficiency by a liquid crystal element, an organic EL element, and the like as a transparent display device decreases when the average transmittance is less than 80%.

Examples

A more detailed description is provided below by way of Examples of the present invention, but the present invention is not limited by these Examples.

<Evaluation of Oxide Sintered Body>

The composition of the metal elements in the obtained oxide sintered body was determined by ICP emission spectroscopy. The formed phases were identified by a powder method with an X-ray diffractometer (available from Philips) using rejects of the obtained oxide sintered body.

<Evaluation of Basic Properties of Oxide Thin Film>

The composition of the obtained oxide thin film was determined by ICP emission spectrometry. The thickness of the oxide thin film was determined with a surface profilometer (available from KLA-Tencor Corporation). The deposition rate was calculated from the film thickness and the film deposition time. The carrier density and mobility of the oxide thin film were determined with a Hall-effect measurement apparatus (available from TOYO Corporation). The formed phases in the film were identified by X-ray diffraction measurement.

1. Case of Using Ni as Positive Divalent Element M (Production and Evaluation of Sintered Body)

An indium oxide powder, a gallium oxide powder, and a nickel oxide powder as the positive divalent element M were prepared as raw material powders so that each powder has a mean particle size of 1.5 μm or less. These raw material powders were prepared so as to obtain the Ga/(In+Ga) atomic ratio and the M/(In+Ga+M) atomic ratio of Examples and Comparative Examples shown in Table 1 and Table 2. The raw material powders were placed in a resin pot together with water and mixed by wet ball milling. In this case, hard ZrO₂ balls were used, and the mixing time was 18 hours. After mixing, the slurry was taken out, filtered, dried, and granulated. The granulated material was compacted by cold isostatic pressing under a pressure of 3 ton/cm².

Next, the compact was sintered as described below. The compact was sintered at a sintering temperature of between 1000 and 1550° C. for 20 hours in an atmosphere obtained by introducing oxygen into air in a sintering furnace at a rate of 5 L/min per 0.1 m³ furnace volume. At this time, the temperature was increased by 1° C./min, oxygen introduction was stopped during cooling after sintering, and the temperature was decreased to 1000° C. by 10° C./min.

The composition of the obtained oxide sintered body was analyzed by ICP emission spectrometry. As a result, it was confirmed that the proportion of the metal elements was substantially the same as the composition prepared at the time of mixing raw material powders in all Examples.

Next, the phase identification of the oxide sintered body was performed by X-ray diffraction measurement, as in Table 1 and Table 2, only the diffraction peak attributed to the In₂O₃ phase having a bixbyite-type structure or only the diffraction peaks attributed to the In₂O₃ phase having a bixbyite-type structure and the GaInO₃ phase having a β-Ga₂O₃-type structure and the (Ga, In)₂O₃ phase were confirmed.

When the oxide sintered body includes a GaInO₃ phase having a β-Ga₂O₃-type structure, the X-ray diffraction peak intensity ratio of the GaInO₃ phase having a β-Ga₂O₃-type structure defined by formula 1 below is shown in Table 1 and Table 2.

100×I[GaInO₃ phase (111)]/{I[In₂O₃ phase (400)]+I[GaInO₃ phase (111)]}[%]  Formula 1

TABLE 1 Ga/ Ni/ Sintering Density of GaInO₃ (111) (In + Ga) (In + Ga + Ni) temperature sintered body Peak intensity Structure of Atomic ratio Atomic ratio (° C.) (g/cm³) ratio sintered body Comparative 0.05 0.01 1400 7.05 — Only In₂O₃ Example 1 Comparative 0.08 0 1450 7.00 — Only In₂O₃ Example 2 Comparative 0.08 0.00001 1450 7.02 — Only In₂O₃ Example 3 Example 1 0.08 0.0001 1450 7.02 2 In₂O₃/GaInO₃ Example 2 0.08 0.001 1400 7.03 3 In₂O₃/GaInO₃ Example 3 0.08 0.01 1350 7.02 5 In₂O₃/GaInO₃ Example 4 0.08 0.03 1400 6.83 6 In₂O₃/GaInO₃ Example 5 0.08 0.05 1400 6.97 6 In₂O₃/GaInO₃ Comparative 0.08 0.08 1400 6.28 — In₂O₃/NiGa₂O₄ Example 4 Example 6 0.10 0.0001 1400 7.01 9 In₂O₃/GaInO₃ Example 7 0.10 0.05 1400 6.86 16 In₂O₃/GaInO₃ Example 8 0.12 0.0001 1400 6.98 15 In₂O₃/GaInO₃ Example 9 0.12 0.03 1200 6.91 22 In₂O₃/GaInO₃ Example 10 0.15 0.0001 1400 6.95 24 In₂O₃/GaInO₃ Example 11 0.15 0.05 1400 6.83 31 In₂O₃/GaInO₃ Comparative 0.15 0.08 1400 6.22 — In₂O₃/NiGa₂O₄ Example 5 (the positive divalent element is Ni)

TABLE 2 Ga/ Ni/ Sintering Density of GaInO₃ (111) (In + Ga) (In + Ga + Ni) temperature sintered body Peak intensity Structure of Atomic ratio Atomic ratio (° C.) (g/cm³) ratio sintered body Example 12 0.19 0.0001 1400 6.92 30 In₂O₃/GaInO₃ Example 13 0.19 0.01 1400 6.90 32 In₂O₃/GaInO₃ Example 14 019 0.01 1550 6.83 28 In₂O₃/GaInO₃/ (Ga,In)₂O₃ Example 15 0.19 0.03 1400 6.87 34 In₂O₃/GaInO₃ Example 16 0.19 0.05 1400 6.84 38 In₂O₃/GaInO₃ Comparative 0.19 0.10 1400 6.20 — In₂O₃/NiGa₂O₄/ Example 6 NiInGaO₄ Comparative 0.30 0.01 1400 6.71 52 In₂O₃/GaInO₃ Example 7 (the positive divalent element is Ni)

The oxide sintered body was machined to a size of 152 mm in diameter and 5 mm in thickness. The sputtering surface was grinded with a cup grinding wheel so that the maximum height Rz was 3.0 μm or less. The machined oxide sintered body was bonded to an oxygen-free copper backing plate by using metal indium to provide a sputtering target.

2. Case of Using Co, Ca, Sr, and Pb as Positive Divalent Element M

The oxide sintered body was produced in the same manner as in the case in which the positive divalent element M was Ni except that cobalt(II) oxide, calcium(II) oxide, strontium(II) oxide, and lead(II) oxide were used as the positive divalent element M, the composition was analyzed, the phases were identified, and the X-ray diffraction peak intensity ratio of the GaInO₃ phase having a β-Ga₂O₃-type structure was thus calculated. The results are shown in Table 3 for the case of using cobalt(II) oxide, Table 4 for the case of using calcium(II) oxide, Table 5 for the case of using lead(II) oxide, and Table 6 for the case of using strontium(II) oxide. Incidentally, in the composition analysis, it was confirmed that the proportion of the metal elements was substantially the same as the composition prepared at the time of mixing raw material powders in all Examples.

TABLE 3 Ga/ Co/ Sintering Density of GaInO₃ (111) (In + Ga) (In + Ga + Co) temperature sintered body Peak intensity Structure of Atomic ratio Atomic ratio (° C.) (g/cm³) ratio sintered body Comparative 0.08 0.00001 1450 6.99 — Only In₂O₃ Example 8 Example 17 0.08 0.0001 1450 6.98 3 In₂O₃/GaInO₃ Example 18 0.08 0.01 1400 6.94 5 In₂O₃/GaInO₃ Example 19 0.08 0.03 1400 6.92 6 In₂O₃/GaInO₃ Example 20 0.08 0.05 1400 6.91 6 In₂O₃/GaInO₃ Comparative 0.08 0.08 1400 6.21 — In₂O₃/CoGa₂O₄ Example 9 Example 21 0.15 0.0001 1400 6.88 24 In₂O₃/GaInO₃ Example 22 0.15 0.03 1400 6.79 29 In₂O₃/GaInO₃ Example 23 0.19 0.0001 1400 6.85 31 In₂O₃/GaInO₃ Example 24 0.19 0.03 1400 6.75 38 In₂O₃/GaInO₃ Comparative 0.30 0.01 1400 6.67 54 In₂O₃/GaInO₃ Example 10 (the positive divalent element is Co)

TABLE 4 Ga/ Ca/ Sintering Density of GaInO₃ (111) (In + Ga) (In + Ga + Ca) temperature sintered body Peak intensity Structure of Atomic ratio Atomic ratio (° C.) (g/cm³) ratio sintered body Comparative 0.08 0.00001 1450 7.00 — Only In₂O₃ Example 11 Example 25 0.08 0.0001 1450 6.98 2 In₂O₃/GaInO₃ Example 26 0.08 0.05 1400 6.88 7 In₂O₃/GaInO₃ Comparative 0.08 0.08 1400 6.20 — In₂O₃/CaGa₄O₇ Example 12 Example 27 0.19 0.0001 1400 6.84 29 In₂O₃/GaInO₃ Example 28 0.19 0.03 1400 6.70 36 In₂O₃/GaInO₃ Comparative 0.30 0.01 1400 6.65 52 In₂O₃/GaInO₃ Example 13 (the positive divalent element is Ca)

TABLE 5 Ga/ Sr/ Sintering Density of GaInO₃ (111) (In + Ga) (In + Ga + Sr) temperature sintered body Peak intensity Structure of Atomic ratio Atomic ratio (° C.) (g/cm3) ratio sintered body Comparative 0.08 0.00001 1450 7.02 — Only In₂O₃ Example 14 Example 29 0.08 0.0001 1450 7.01 2 In2O3/GaInO3 Example 30 0.08 0.05 1400 6.85 7 In2O3/GaInO3 Comparative 0.08 0.08 1400 6.18 — In2O3/SrGa2O4 Example 15 Example 31 0.19 0.0001 1400 6.80 29 In2O3/GaInO3 Example 32 0.19 0.03 1400 6.68 37 In2O3/GaInO3 Comparative 0.30 0.01 1400 6.63 51 In2O3/GaInO3 Example 16 (the positive divalent element is Sr)

TABLE 6 Ga/ Pb/ Sintering Density of GaInO₃ (111) (In + Ga) (In + Ga + Pb) temperature sintered body Peak intensity Structure of Atomic ratio Atomic ratio (° C.) (g/cm³) ratio sintered body Comparative 0.08 0.00001 1450 7.03 — Only In₂O₃ Example 17 Example 33 0.08 0.0001 1450 7.05 2 In₂O₃/GaInO₃ Example 34 0.08 0.05 1400 7.02 4 In₂O₃/GaInO₃ Comparative 0.08 0.08 1400 6.52 — In₂O₃/Ga₂PbO₄ Example 18 Example 35 0.19 0.0001 1400 6.87 28 In₂O₃/GaInO₃ Example 36 0.19 0.03 1400 6.85 30 In₂O₃/GaInO₃ Comparative 0.30 0.01 1400 6.71 50 In₂O₃/GaInO₃ Example 19 (the positive divalent element is Pb)

(Evaluation on Sputter Deposition)

Film deposition by direct current sputtering was performed at room temperature without heating the substrate in Examples 1 to 11, 17 to 22, 25, 26, 29, 30, 33, and 34 and Comparative Examples 1 to 5, 8, 9, 11, 12, 14, 15, 17, and 18 and at a substrate temperature of 200° C. in Examples and Comparative Examples other than Examples and Comparative Examples above by using the sputtering targets of the respective Examples and Comparative Examples and an alkali-free glass substrate (Eagle XG available from Corning). The sputtering target was attached to a cathode of a direct current magnetron sputtering apparatus (available from Tokki Corporation) having a direct current power supply with no arcing control function. At this time, the target-substrate (holder) distance was fixed at 60 mm. After evacuation to 1×10⁻⁴ Pa or less, a gas mixture of argon and oxygen was introduced at an appropriate oxygen ratio, which depends on the gallium content in each target. The gas pressure was controlled to 0.6 Pa. A direct current plasma was generated by applying a direct current power of 300 W (1.64 W/cm²). After presputtering for 10 minutes, the substrate was placed directly above the sputtering target, namely, in the stationary opposing position, and an oxide thin film having a thickness of 50 nm was deposited. The composition of the obtained oxide thin film was confirmed to be substantially the same as that of the target. In addition, the oxide thin film was confirmed to be amorphous as a result of the X-ray diffraction measurement. The obtained amorphous oxide thin film was subjected to a heat treatment at 300 to 600° C. for 30 minutes in an oxidizing atmosphere by using an RTA (Rapid Thermal Annealing) apparatus. The oxide thin film after the heat treatment was confirmed to be crystallized from the results of the X-ray diffraction measurement, and In₂O₃ (111) was the main peak. The Hall-effect measurement was performed on the crystallized oxide semiconductor thin films thus obtained to determine the carrier density and the carrier mobility. The obtained evaluation results are summarized in Table 7 to Table 12.

TABLE 7 Heat Ga/ Ni/ Sintering treatment Film Crystal Carrier Carrier (In + Ga) (In + Ga + Ni) temperature temperature thickness structure density mobility Atomic ratio Atomic ratio (° C.) (° C.) (nm) of thin film (×10¹⁷ cm⁻³) (cm²/V · s) Comparative 0.05 0.01 1400 300 50 Only In₂O₃ 11 22.2 Example 1 Comparative 0.08 0 1450 300 50 Only In₂O₃ 14 24.5 Example 2 Comparative 0.08 0.00001 1450 300 50 Only In₂O₃ 12 23.9 Example 3 Example 1 0.08 0.0001 1450 300 50 Only In₂O₃ 9.4 23.7 Example 2 0.08 0.001 1400 325 50 Only In₂O₃ 4.9 22.7 Example 3 0.08 0.01 1350 325 50 Only In₂O₃ 2.9 22.0 Example 4 0.08 0.03 1400 325 50 Only In₂O₃ 0.9 18.5 Example 5 0.08 0.05 1400 325 50 Only In₂O₃ 0.18 14.4 Comparative 0.08 0.08 1400 325 50 Only In₂O₃ 0.031 9.4 Example 4 Example 6 0.10 0.0001 1400 325 50 Only In₂O₃ 3.3 21.8 Example 7 0.10 0.05 1400 325 50 Only In₂O₃ 0.13 13.8 Example 8 0.12 0.0001 1400 350 50 Only In₂O₃ 2.6 21.0 Example 9 0.12 0.03 1200 350 50 Only In₂O₃ 0.75 18.1 Example 10 0.15 0.0001 1400 375 50 Only In₂O₃ 1.9 20.4 Example 11 0.15 0.05 1400 375 50 Only In₂O₃ 0.11 13.1 Comparative 0.15 0.08 1400 375 50 Only In₂O₃ 0.011 8.7 Example 5 (the positive divalent element is Ni)

TABLE 8 Heat Ga/ Ni/ Sintering treatment Film Crystal Carrier Carrier (In + Ga) (In + Ga + Ni) temperature temperature thickness structure density mobility Atomic ratio Atomic ratio (° C.) (° C.) (nm) of thin film (×10¹⁷ cm⁻³) (cm²/V · s) Example 12 0.19 0.0001 1400 350 50 Only In₂O₃ 1.4 19.1 Example 13 0.19 0.01 1400 350 50 Only In₂O₃ 1.0 17.3 Example 14 0.19 0.01 1550 350 50 Only In₂O₃ 0.84 15.7 Example 15 0.19 0.03 1400 350 50 Only In₂O₃ 0.51 16.8 Example 16 0.19 0.05 1400 350 50 Only In₂O₃ 0.17 14.1 Comparative 0.19 0.10 1400 350 50 Only In₂O₃ 0.071 6.4 Example 6 Comparative 0.30 0.01 1400 550 50 Only In₂O₃ 0.033 4.3 Example 7 (the positive divalent element is Ni)

TABLE 9 Heat Ga/ Co/ Sintering treatment Film Crystal Carrier Carrier (In + Ga) (In + Ga + Co) temperature temperature thickness structure density mobility Atomic ratio Atomic ratio (° C.) (° C.) (nm) of thin film (×10¹⁷ cm⁻³) (cm²/V · s) Comparative 0.08 0.00001 1450 300 50 Only In₂O₃ 14 24.5 Example 8 Example 17 0.08 0.0001 1450 300 50 Only In₂O₃ 9.6 23.2 Example 18 0.08 0.01 1400 325 50 Only In₂O₃ 3.0 21.4 Example 19 0.08 0.03 1400 325 50 Only In₂O₃ 0.92 17.7 Example 20 0.08 0.05 1400 325 50 Only In₂O₃ 0.26 14.1 Comparative 0.08 0.08 1400 325 50 Only In₂O₃ 0.022 9.1 Example 9 Example 21 0.15 0.0001 1400 375 50 Only In₂O₃ 2.2 20.6 Example 22 0.15 0.03 1400 375 50 Only In₂O₃ 0.36 16.0 Example 23 0.19 0.0001 1400 350 50 Only In₂O₃ 1.8 19.0 Example 24 0.19 0.03 1400 350 50 Only In₂O₃ 0.66 16.1 Comparative 0.30 0.01 1400 550 50 Only In₂O₃ 0.029 3.8 Example 10 (the positive divalent element is Co)

TABLE 10 Heat Ga/ Ca/ Sintering treatment Film Crystal Carrier Carrier (In + Ga) (In + Ga + Ca) temperature temperature thickness structure density mobility Atomic ratio Atomic ratio (° C.) (° C.) (nm) of thin film (×10¹⁷ cm⁻³) (cm²/V · s) Comparative 0.08 0.00001 1450 300 50 Only In₂O₃ 13 23.0 Example 11 Example 25 0.08 0.0001 1450 300 50 Only In₂O₃ 9.4 22.9 Example 26 0.08 0.05 1400 325 50 Only In₂O₃ 0.34 13.9 Comparative 0.08 0.08 1400 325 50 Only In₂O₃ 0.032 8.4 Example 12 Example 27 0.19 0.0001 1400 350 50 Only In₂O₃ 1.8 18.7 Example 28 0.19 0.03 1400 350 50 Only In₂O₃ 0.70 15.9 Comparative 0.30 0.01 1400 550 50 Only In₂O₃ 0.035 4.6 Example 13 (the positive divalent element is Ca)

TABLE 11 Heat Ga/ Sr/ Sintering treatment Film Crystal Carrier Carrier (In + Ga) (In + Ga + Sr) temperature temperature thickness structure density mobility Atomic ratio Atomic ratio (° C.) (° C.) (nm) of thin film (×10¹⁷ cm⁻³) (cm²/V · s) Comparative 0.08 0.00001 1450 300 50 Only In₂O₃ 12 23.2 Example 14 Example 29 0.08 0.0001 1450 300 50 Only In₂O₃ 9.1 23.0 Example 30 0.08 0.05 1400 325 50 Only In₂O₃ 0.40 13.4 Comparative 0.08 0.08 1400 325 50 Only In₂O₃ 0.041 8.4 Example 15 Example 31 0.19 0.0001 1400 350 50 Only In₂O₃ 1.7 18.4 Example 32 0.19 0.03 1400 350 50 Only In₂O₃ 0.68 16.1 Comparative 030 0.01 1400 550 50 Only In₂O₃ 0.037 4.9 Example 16 (the positive divalent element is Sr)

TABLE 12 Heat Ga/ Pb/ Sintering treatment Film Crystal Carrier Carrier (In + Ga) (In + Ga + Pb) temperature temperature thickness structure density mobility Atomic ratio Atomic ratio (° C.) (° C.) (nm) of thin film (×10¹⁷ cm⁻³) (cm²/V · s) Comparative 0.08 0.00001 1450 300 50 Only In₂O₃ 11 23.6 Example 17 Example 33 0.08 0.0001 1450 300 50 Only In₂O₃ 9.2 23.7 Example 34 0.08 0.05 1400 325 50 Only In₂O₃ 0.24 14.7 Comparative 0.08 0.08 1400 325 50 Only In₂O₃ 0.041 9.7 Example 18 Example 35 0.19 0.0001 1400 350 50 Only In₂O₃ 2.0 19.1 Example 36 0.19 0.03 1400 350 50 Only In₂O₃ 0.73 16.4 Comparative 0.30 0.01 1400 550 50 Only In₂O₃ 0.039 5.6 Example 19 (the positive divalent element is Pb)

(Evaluation on Nodule Generation)

The evaluation on nodule generation was carried out by mass production-simulated sputter deposition for sputtering targets of Examples 3, 13, 18, 26, 30, and 34 and Comparative Examples 1, 4, 7, 9, 12, 15, and 18. A load-lock-system pass-type magnetron sputtering device equipped with a direct current power source without an arcing suppression function (available from ULVAC Technologies, Inc.) was used as the sputtering device. A square target having a height of 5 inches and a width of 15 inches was used as the target. The sputtering chamber for the evaluation of sputter deposition was evacuated to 7×10⁻⁵ Pa or less, a mixed gas of argon and oxygen was then introduced into the chamber so that a suitable oxygen ratio was obtained in accordance with the gallium amount in each target, and the gas pressure was adjusted to 0.6 Pa. The reason for selecting the sputtering gas having such conditions is because it is not possible to carry out fair evaluation when the degree of vacuum in the sputtering chamber exceeds 1×10⁻⁴ Pa and the moisture pressure in the chamber is high or hydrogen gas is doped. As it is well known in ITO and the like, the crystallization temperature of the film increases when H⁺ derived from moisture or hydrogen gas is incorporated into the film, and the film adhering to the target non-erosion portion is likely to be amorphous. As a result, the film stress decreases and thus the film is less likely to peel off the non-erosion portion and nodules are less likely to be generated. The direct current power was set to 2500 W (direct current power density: 5.17 W/cm²) by taking the fact into account that the direct current power density employed in mass production is generally about 3 to 6 W/cm². As the evaluation on nodule generation, the target surface was observed after the continuous sputtering discharge of 50 kWh and the presence or absence of nodule generation was evaluated.

[Evaluation]

As shown in Table 1 to Table 6, in the case of Examples 1 to 36 in which the gallium content is 0.08 or more and less than 0.20 in terms of Ga/(In+Ga) atomic ratio and the content of the positive divalent element M is 0.0001 or more and 0.05 or less in terms of M/(In+Ga+M) atomic ratio, the oxide sintered bodies are composed of an In₂O₃ phase having a bixbyite-type structure; and a GaInO₃ phase having a β-Ga₂O₃-type structure as a formed phase other than the In₂O₃ phase, or a GaInO₃ phase having a β-Ga₂O₃-type structure and a (Ga, In)₂O₃ phase as a formed phase other than the In₂O₃ phase.

In contrast, the oxide sintered body of Comparative Example 1 in which the gallium content is less than 0.08 in terms of Ga/(In+Ga) atomic ratio and the oxide sintered bodies of Comparative Examples 2, 3, 8, 11, 14, and 17 in which the content of the positive divalent element M is less than 0.0001 in terms of M/(In+Ga+M) atomic ratio are an oxide sintered body composed only of an In₂O₃ phase having a bixbyite-type structure. That is, the oxide sintered body of the present invention which is composed of an In₂O₃ phase having a bixbyite-type structure; and a GaInO₃ phase having a β-Ga₂O₃-type structure as a formed phase other than the In₂O₃ phase, or a GaInO₃ phase having a β-Ga₂O₃-type structure and a (Ga, In)₂O₃ phase as a formed phase other than the In₂O₃ phase is not obtained. In addition, in the oxide sintered bodies of Comparative Examples 4, 5, 6, 9, 12, 15, and 18, the generated phase other than the In₂O₃ phase having a bixbyite-type structure includes a NiGa₂O₄ phase, a CoGa₂O₄ phase, a CaGa₄O₇ phase, a Ca₅Ga₆O₁₄ phase, a SrGa₁₂O₁₉ phase, a SrGa₂O₄ phase, a Sr₃Ga₂O₆ phase, and a Ga₂PbO₄ phase that are a complex oxide composed of the positive divalent element M and gallium or a complex oxide phase of these since the content of the positive divalent element M exceeds 0.05 in terms of M/(In+Ga+M) atomic ratio, and thus the intended oxide sintered body of the present invention is not obtained.

In addition, in the evaluation on nodule generation of Examples 3, 13, 18, 26, 30, and 34 and Comparative Examples 1, 4, 7, 9, 12, 15, and 18, the generation of nodules is not observed on the targets of Examples 3, 13, 18, 26, 30, and 34, which are the oxide sintered body of the present invention. On the other hand, the generation of a great number of nodules is observed on the targets of Comparative Examples 1, 4, 7, 9, 12, 15, and 18. In Comparative Example 1, it is considered that this is because the structure of the sintered body is composed only of an In₂O₃ phase having a bixbyite-type structure although the density of the sintered body is high. In Comparative Examples 4, 7, 9, 12, 15, and 18, the fact that the density of the sintered body is low and a NiGa₂O₄ phase, a CoGa₂O₄ phase, a CaGa₄O₇ phase, a Ca₅Ga₆O₁₄ phase, a SrGa₁₂O₁₉ phase, a SrGa₂O₄ phase, a Sr₃Ga₂O₆ phase, and a Ga₂PbO₄ phase that are a complex oxide composed of the positive divalent element M and gallium and have a higher electrical resistance so as to easily remain after sputter deposition or a complex oxide phase of these are included in the sintered bodies is considered as the factor. Therefore, arcing often occurred during sputtering discharge.

In addition, according to Table 7 to Table 12, it can be seen that the oxide semiconductor thin films of Examples in which the gallium content is controlled to 0.08 or more and less than 0.20 in terms of Ga/(In+Ga) atomic ratio and the content of the positive divalent element M is controlled to 0.0001 or more and 0.05 or less in terms of M/(In+Ga+M) atomic ratio are all composed only of an In₂O₃ phase having a bixbyite-type structure. In addition, it can be seen that the oxide semiconductor thin films of Examples have a carrier density of less than 1.0×10¹⁸ cm⁻³ and a carrier mobility of 10 cm² V⁻¹ sec⁻¹ or more.

Among them, the oxide semiconductor thin films of Examples 1 to 4, 6, 8 to 10, and 17 to 19, 21, 22, 25, 29, and 33 in which the gallium content is 0.08 or more and 0.15 or less in terms of Ga/(In+Ga) atomic ratio and the content of the positive divalent element M is 0.0001 or more and 0.03 or less in terms of M/(In+Ga+M) atomic ratio exhibit excellent properties so that the carrier mobility thereof is 15 cm² V⁻¹ sec⁻¹ or more.

In contrast, the oxide semiconductor thin films of Comparative Examples 1 to 3, 8, 11, 14, and 17 are an oxide semiconductor thin film composed only of an In₂O₃ phase having a bixbyite-type structure, but it is not suitable for the active layer of TFTs since the carrier density thereof exceeds 1.0×10¹⁸ cm⁻³. In addition, in the oxide semiconductor thin films of Comparative Examples 4, 5, 6, 9, 12, 15, an 18, the content of the positive divalent element M exceeds 0.05 in terms of M/(In+Ga+M) atomic ratio and the carrier mobility is less than 10 cm² V⁻¹ sec⁻¹, and thus the intended oxide semiconductor thin film of the present invention is not obtained. 

1. An oxide sintered body comprising indium, gallium, and a positive divalent element as oxides, wherein the gallium content is 0.08 or more and less than 0.20 in terms of Ga/(In+Ga) atomic ratio, the total content of all the positive divalent elements is 0.0001 or more and 0.05 or less in terms of M/(In+Ga+M) atomic ratio, the positive divalent element is one or more selected from the group consisting of nickel, cobalt, calcium, strontium, and lead, the oxide sintered body includes; an In₂O₃ phase having a bixbyite-type structure; and a GaInO₃ phase having a β-Ga₂O₃-type structure as a formed phase other than the In₂O₃ phase, or a GaInO₃ phase having a β-Ga₂O₃-type structure and a (Ga, In)₂O₃ phase as a formed phase other than the In₂O₃ phase; and the oxide sintered body is substantially free of a NiGa₂O₄ phase, a CoGa₂O₄ phase, a CaGa₄O₇ phase, a Ca₅Ga₆O₁₄ phase, a SrGa₁₂O₁₉ phase, a SrGa₂O₄ phase, a Sr₃Ga₂O₆ phase, and a Ga₂PbO₄ phase, which are a complex oxide composed of the positive divalent element and gallium or a complex oxide phase of these.
 2. The oxide sintered body according to claim 1, wherein the total content of all the positive divalent elements is 0.0001 or more and 0.03 or less in terms of M/(In+Ga+M) atomic ratio.
 3. The oxide sintered body according to claim 1, wherein the gallium content is 0.08 or more and 0.15 or less in terms of Ga/(In+Ga) atomic ratio.
 4. The oxide sintered body according to claim 1, wherein the oxide sintered body is substantially free of positive divalent elements other than the positive divalent element and positive trivalent to positive hexavalent elements other than indium and gallium.
 5. The oxide sintered body according to claim 1, wherein an X-ray diffraction peak intensity ratio of a GaInO₃ phase having a β-Ga₂O₃-type structure defined by formula 1 below is in a range of 2% or more and 75% or less. 100×I[GaInO₃ phase (111)]/{I[In₂O₃ phase (400)]+I[GaInO₃ phase (111)]}[%]  Formula 1 (in Formula 1, I [In₂O₃ phase (400)] represents a (400) peak intensity of the In₂O₃ phase having a bixbyite-type structure, and I [GaInO₃ phase (111)] represents a (111) peak intensity of the β-GaInO₃ phase that is a composite oxide having a β-Ga₂O₃-type structure.)
 6. A sputtering target obtained by machining the oxide sintered body according to claim
 1. 7. A crystalline oxide semiconductor thin film obtained by forming an amorphous film on a substrate by sputtering using the sputtering target according to claim 6, followed by crystallization of the amorphous film by a heat treatment in an oxidizing atmosphere.
 8. A crystalline oxide semiconductor thin film according to claim 7, wherein a carrier mobility is 10 cm² V⁻¹ sec⁻¹ or more.
 9. The crystalline oxide semiconductor thin film according to claim 7, wherein a carrier density is less than 1.0×10¹⁸ cm⁻³. 